Process for the production of a semiconductor device having better interface adhesion between dielectric layers

摘要

A method for manufacturing a semiconductor device having improved adhesion at the interface between layers of dielectric material. Comprising the steps of forming a first layer of dielectric material (3) on one part of a structure defined in a semiconductor material substrate and forming a second dielectric material layer (5) superimposed on one zone of the first layer. The method comprises the additional step of forming an intermediate adhesion layer (6) comprising a ternary compound of silicon, oxygen and carbon. The formation of the adhesion layer takes place at low temperature and in an atmosphere kept essentially free of oxidative substances different from those serving to provide the silicon and the carbon to the layer. Preferably the layer is formed by the plasma enhanced chemical vapour deposition technique.