NON VOLATILE FERROELECTRIC RANDOM ACCESS MEMORY AND METHOD FOR DRIVING THE SAME

摘要

PURPOSE: A non volatile ferroelectric random access memory and a method for driving the same are provided to reduce the capacitance of the bitline by providing with one sub bitline per a main bitline, thereby improving the speed of chip operation. CONSTITUTION: A non volatile ferroelectric random access memory includes a top and a bottom cell array block provided with a plurality of sub cell array blocks with a plurality of unit cells, a plurality of main bitlines(MBL(0),MBL(1)) arranged in a direction corresponding to the sub cell array blocks by a column unit, a sense amplifier block configured with a plurality of sense amplifiers to amplify the main bit lines(MBL(0),MBL(1)) formed between the top and the bottom cell array blocks and a plurality of sub bitlines(SBL(0),SBL(1)) formed at the same direction of the main bitlines(MBL(0),MBL(1)) and connected to the one terminal of the unit cells.