| 摘要 |
PURPOSE: An active matrix organic electroluminescent device is provided to be capable of preventing leakage current of a thin film transistor by forming a shield film on the thin film transistor. CONSTITUTION: A thin film transistor(T2) has gate, source and drain electrodes(111,151,152) and is formed on a substrate. A protection film(160) covers the thin film transistor and has a contact hole exposing the drain electrode. A cathode electrode(171) is formed on the protection film and is contact with the drain electrode via the contact hole. A shield film(172) is formed on the protection film and corresponds to the thin film transistor. An organic layer is formed on the cathode electrode, and an anode electrode covers the organic layer.
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