发明名称 |
A process of forming an interface free layer of silicon on a substrate of monocrystalline silicon |
摘要 |
<p>A process of forming an interface free layer of silicon on a substrate of monocrystalline silicon (105) including the steps of: providing a substrate of monocrystalline silicon (105) having a surface substantially free of oxide, depositing a layer of silicon in-situ doped (120) on the surface of the substrate in an oxygen-free environment and at a temperature below 700 DEG C for obtaining a first monocrystalline portion (120m) of the silicon layer adjacent to the substrate and a second polycrystalline portion (120p) of the silicon layer spaced apart from the substrate, and heating the layer of silicon for growing the monocrystalline portion through part of the polycrystalline portion. <IMAGE> <IMAGE> <IMAGE></p> |
申请公布号 |
EP1296361(A1) |
申请公布日期 |
2003.03.26 |
申请号 |
EP20010830580 |
申请日期 |
2001.09.13 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
WARD, PETER;FERLA, GIUSEPPE;LORENTI, SIMONA |
分类号 |
H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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