| 发明名称 |
Process for producing semiconductor substrates |
| 摘要 |
<p>A process for producing semiconductor substrates with a coating film having an excellent chemical resistance with a high yield and an excellent production reliability without any development of cracks and any generation of foreign matters due to a projected portion of the coating film is described, which includes the steps of: (a) forming a coating film by coating an insulating film-forming coating liquid on a substrate mounted on a rotating disc of a spin coater according to a spin coating method; and then (b) removing a projected portion of the coating film formed at the periphery of the substrate by ejecting a solvent through a nozzle moving from any point on a line drawn between the periphery edge and the center of the substrate toward the periphery edge while rotating the substrate.</p> |
| 申请公布号 |
EP1296358(A2) |
申请公布日期 |
2003.03.26 |
| 申请号 |
EP20020256469 |
申请日期 |
2002.09.18 |
| 申请人 |
CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. |
发明人 |
EGAMI, MIKI;MURAGUCHI, RYO |
| 分类号 |
H01L21/768;C23C18/12;H01L21/00;H01L21/306;H01L21/31;H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):H01L21/00;C23C18/00 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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