METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor in a semiconductor device is provided to prevent bridge between a storage node and a storage node contact plug, and a bit line and the storage node contact plug due to misalignment, and to restrain double bit failure due to outward growth of MPS(Metastable PolySilicon). CONSTITUTION: A contact plug(62) is formed to connect a substrate(51) through the first insulating layer(58) formed on the substrate(51). An etch stop layer(63) and the second insulating layer(64) are sequentially formed on the first insulating layer. An opening is formed to expose the contact plug(62) by sequentially etching the second insulating layer and the etch stop layer. After forming a conductive layer on the second insulating layer including the opening, a storage node(70) is formed in the opening by overetching the conductive layer compared to the second insulating layer. An MPS layer(71) is then formed on the surface of the storage node(70). A dielectric film(72) and a plate electrode(73) are sequentially formed on the resultant structure.