METHOD FOR MANUFACTURING CAPACITOR

摘要

PURPOSE: A method for manufacturing a capacitor is provided to enhance the surface area of the capacitor and to prevent bridge between storage nodes due to outward growth of MPS(Metastable PolySilicon). CONSTITUTION: A capacitor oxide layer(32) having an opening is formed on a semiconductor substrate having a junction layer(31). The first electrode(33a) as a storage node is formed at the bottom and sidewall of the opening. Oxygen ions are implanted into the upper portion of the first electrode(33a) of sides of the opening. Then, an MPS layer(36) is formed on the surface of the first electrode(33a). A dielectric film and the second electrode as a plate electrode are sequentially formed on the resultant structure.