METHOD OF FABRICATING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE FOR CONTROLLING THERMAL BUDGET

摘要

PURPOSE: A method of fabricating a capacitor of a semiconductor memory device for controlling a thermal budget is provided to prevent leakage current by performing a preheating process for a bottom electrode in a thermal process for crystallizing a dielectric layer. CONSTITUTION: A bottom electrode(22a) is formed on an upper surface of a semiconductor substrate(10). A thermal process for the bottom electrode(22a) is performed by using the first thermal budget. A dielectric layer(32) is formed on the bottom electrode(22a). The dielectric layer(22a) is crystallized by using the second thermal budget. The bottom electrode(22a) is formed with noble metal, conductive noble metal oxide, and conductive metal oxide. The bottom electrode(22a) is formed with Pt, Ru, Ir, PtO, RuO2, IrO2, SrRuO3, BaSrRuO3, or LaScCo.