| 摘要 |
PURPOSE: A semiconductor device having a dielectric film with a high permittivity and a method for manufacturing the same are provided to improve capacitance and to prevent degradation of a dielectric property due to residues of impurity. CONSTITUTION: The first gate insulating layer(22a) containing aluminum is formed on a semiconductor substrate(21). The second gate insulating layer(22b) containing lithium is formed on the first gate insulting layer(22a). A gate electrode(23) is formed on the second gate insulting layer(22b). At the time, alumina(Al2O3) is used as the first gate insulting layer(22a) containing aluminum. Also, LixTa1-xO3 (where, x=0.2-0.8) is used as the second gate insulating layer(22b) containing lithium.
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