发明名称 CMP APPARATUS
摘要 PURPOSE: A chemical mechanical polishing apparatus is provided to not only polish the surface of a wafer uniformly but also prevent the wafer from being squeezed out by making the edge of grooves on a retainer ring round. CONSTITUTION: A chemical mechanical polishing apparatus has polishing head, a head-retainer ring. Many grooves(130) are formed on the bottom side of the head-retainer ring, being warped from the inside to the outside depending on the turning direction of the upper part of the polishing head relative to that of the head-retainer ring. The edge around the bottom of each groove is made round.
申请公布号 KR20030024402(A) 申请公布日期 2003.03.26
申请号 KR20010057542 申请日期 2001.09.18
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, JAE GEON;SONG, PIL GEUN
分类号 H01L21/302;(IPC1-7):H01L21/302 主分类号 H01L21/302
代理机构 代理人
主权项
地址