发明名称 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR ATTACHING DRIVING IC BY USING THE SAME
摘要 PURPOSE: A thin film transistor substrate and a method for attaching a driving IC(Integrated Circuit) by using the same are provided to carry out re-work without removing anisotropic conductive particles in spite of any failure of the IC. CONSTITUTION: A thin film transistor includes gate lines(21) formed on an insulating substrate, gate pads(23,24) connected to ends of the gate lines for transmitting gate signals from the outside to the gate lines, data lines(61) intersecting the gate lines and defining pixel areas, data pads(65,66) connected to ends of the data lines for transmitting data signals from the outside to the data lines, thin film transistors connected to the gate and data lines, and pixel electrodes connected to the gate and data lines via the thin film transistors, wherein the gate pads or the data pads are formed at least two or more.
申请公布号 KR20030024359(A) 申请公布日期 2003.03.26
申请号 KR20010057472 申请日期 2001.09.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, MUN GI
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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