SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PURPOSE: To stably form a protection film at the base of a via hole and to suppress deterioration of precision in the via hole size while the generation of a sub-trench and deformation are suppressed on the surface of first wiring. CONSTITUTION: First wiring 2 is formed in a first interlayer insulating film 1. An etching stopper film 16 is formed on the first wiring 2. A second interlayer insulating film 3 and a reflection preventing film 4 are sequentially formed on the etching stopper film 16. The via hole 6 passing through the second interlayer insulating film 3 and the reflection preventing film 4 is formed so that it reaches the etching stopper film 16. An organic film 17 is formed in the via hole 6 and a trench 10 is formed to reach the organic film 17 in the second interlayer insulating film 4. The partial surface of first wiring 2 is exposed by removing the reflection preventing film 4 and the etching stopper film 16 at the base of the via hole 6. Second wiring 13 is formed in the trench 10 and the via hole 6.