发明名称 CHARGED PARTICLE BEAM INSPECTION APPARATUS AND METHOD FOR FABRICATING DEVICE USING THAT INSPECTION APPARATUS
摘要 <p>An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.</p>
申请公布号 EP1296351(A1) 申请公布日期 2003.03.26
申请号 EP20010943833 申请日期 2001.06.27
申请人 EBARA CORPORATION;NIKON CORPORATION 发明人 NAKASUJI, MAMORU;NOJI, NOBUHARU;SATAKE, TOHRU;KIMBA, TOSHIFUMI;SOBUKAWA, HIROSI;YOSHIKAWA, SHOJI;KARIMATA, TSUTOMU;OOWADA, SHIN;SAITO, MUTSUMI;HAMASHIMA, MUNEKI;TAKAGI, TORU
分类号 G01N23/225;H01J37/06;H01J37/073;H01J37/18;H01J37/20;H01J37/22;H01J37/244;H01J37/28;(IPC1-7):H01J37/29;G01B15/00;H01L21/66 主分类号 G01N23/225
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