METHOD FOR FABRICATING CYLINDRICAL CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a cylindrical capacitor of a semiconductor memory device is provided to prevent bit failure due to a damage of a cylindrical storage electrode by forming the cylindrical storage electrode on the second mold pattern. CONSTITUTION: The first mold pattern is formed on a semiconductor substrate(101). A protective layer is formed on an entire surface of the semiconductor substrate(101). The second mold pattern(107) is formed by etching the protective layer and the first mold pattern. A conductive layer for storage electrode is formed on the entire surface of the semiconductor substrate(101). A sacrificial layer is formed on the conductive layer in order to fill up a contact hole. A sacrificial layer pattern(111a) and a cylindrical storage electrode(109a) are formed by planarizing the sacrificial layer and the conductive layer. The sacrificial layer pattern(111a) and the second mold pattern(107) are removed.