Magnetic tunnel junctions using ferrimagnetic materials

摘要

The use of ferrimagnetic materials is proposed for use in magnetic devices. Such magnetic devices include magnetic tunnel junctions (MTJ) which have at least two magnetic layers separated by an insulating barrier layer, wherein at least one of the two magnetic layers is ferrimagnetic. Such MTJ's are used in MRAM (magnetic random access memory) structures. Where the magnetic device is a magnetic sensor, it preferably includes a layer that comprises a ferrimagnetic material separated from another magnetic layer by a barrier layer and the magnetizations of the magnetic layer are oriented at an angle to one another.