发明名称 Substrate processing system and substrate processing method
摘要 In an FAB having a plurality of coating and developing processing apparatus, atmospheric pressure is measured by a barometer provided in the FAB, and a measured value is sent to each of the coating and developing processing apparatus via a host computer. In each coating and developing processing apparatus, based on the value, the rotation speed of a substrate in a resist solution coating unit is regulated only when the atmospheric pressure value exceeds a predetermined allowable value which is preset according to the type of chemical. As a result, without causing the complication of the apparatus, plant and equipment investment can be held to minimum, and the coating film thickness of a substrate can be maintained at a predetermined thickness.
申请公布号 US6536964(B1) 申请公布日期 2003.03.25
申请号 US20000652141 申请日期 2000.08.31
申请人 TOKYO ELECTRON LIMITED 发明人 KITANO TAKAHIRO;AKIMOTO MASAMI;TOSHIMITSU TAKAFUMI
分类号 H01L21/027;G03F7/16;G03F7/30;H01L21/00;(IPC1-7):G03D5/04;B05D3/12;B05C11/02 主分类号 H01L21/027
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