发明名称 Optical semiconductor device and method of manufacturing the same
摘要 An optical semiconductor device is a buried hetero structure type, and includes a semi-insulating semiconductor block layer, a carrier trap layer, and a clad layer and a contact layer. Each of the clad layer and the contact layer is formed by selective growth. The carrier trap layer and the semi-insulating block layer have an etched mesa-structure.
申请公布号 US6539039(B2) 申请公布日期 2003.03.25
申请号 US20010832842 申请日期 2001.04.12
申请人 NEC CORPORATION 发明人 FURUSHIMA YUJI
分类号 H01S5/223;H01S5/026;H01S5/042;H01S5/10;H01S5/22;H01S5/227;H01S5/323;(IPC1-7):H01S5/227 主分类号 H01S5/223
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