发明名称 Electrostatic discharge protective circuit
摘要 An electrostatic discharge protective circuit can receive a pre-stage driver output and involve a first PMOS transistor, a first NMOS transistor and a second NMOS transistor and all connect in series. More particularly, a source region of the first PMOS transistor connects to a system power source; and a drain region connects to a conductive pad, and a gate receives the pre-stage driver output. A gate of the first NMOS transistor connects to a first node A, a gate of the second NMOS transistor connects to a third node C and a source region connects to a grounded node. The third node C also can receive the pre-stage driver output. There is a first resistor between the first node A and the system power source. There is a second PMOS transistor in between the first node A and the third node C and connect with two source/drain regions. And the substrate of the second PMOS transistor also connects with the first node A. Also, a gate of the second PMOS transistor connects with a second node B. There is a second resistor between the second node B and the system power source, and there is a capacitor between the second node B and the grounded node.
申请公布号 US6538868(B2) 申请公布日期 2003.03.25
申请号 US20020236821 申请日期 2002.09.06
申请人 FARADAY TECHNOLOGY CORP. 发明人 CHANG HUNG-YI;CHANG YI-HUA;CHIEN CHIH-FU
分类号 H01L27/02;H02H3/22;H02H9/00;H03K5/08;(IPC1-7):H02H9/00 主分类号 H01L27/02
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