Single-substrate-heat-processing apparatus for semiconductor process

摘要

A higher-temperature heating zone and lower-temperature heating zone are set in a process chamber for a single-substrate-heat-processing apparatus in order to subject a wafer to two processes with different process temperatures. In the higher-temperature heating zone, the wafer is heated as it is placed on a worktable. In the lower-temperature heating zone, the wafer is heated with a smaller heat quantity as it floats above the worktable. In the lower-temperature heating zone, a heat ray reflector for compensating for heat dissipated from the peripheral portion of the wafer is disposed to surround the wafer.