发明名称 Pattern formation method using two alternating phase shift masks
摘要 A method of forming patterns wherein a first exposure is performed using a first alternating phase shift mask, and a second exposure is performed using a second alternating phase shift mask. Phase shift regions and non-phase shift regions of the second mask are made to correspond respectively to non-phase shift regions and phase shift regions of the first mask. Consequently, light transmitted through phase shift regions of the first mask during the first exposure, is transmitted through second non-phase shift regions of the second mask during the second exposure, so that weak light intensity is compensated for. Intensities of light passed through phase shift regions and non-phase shift regions are thus the same. Therefore, the DELTACD phenomenon and the inversion phenomenon of critical dimensions between phase shift regions and non-phase shift regions with respect to different focuses, may be prevented.
申请公布号 US6537837(B2) 申请公布日期 2003.03.25
申请号 US20010977323 申请日期 2001.10.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SUNG-WOO
分类号 G03F1/08;G03F1/00;G03F1/14;G03F1/30;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G01R31/26 主分类号 G03F1/08
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