| 摘要 |
In a plasma-enhanced etching process, the end point of the etching is detected based on the light intensity of the plasma and the second derivative of the light intensity. First, magnitude of the light intensity is judged based on a threshold to determine whether the etching area ratio is large or small with respect to the total area. Then, the second derivative of the light intensity is calculated after selecting sampling time interval based on the judgement of the etching area ration. The end point is detected when the second derivative assumes zero after exceeding a threshold in the absolute value thereof.
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