发明名称 Voltage detection circuit, power-on/off reset circuit, and semiconductor device
摘要 The present invention comprises a first MOS transistor whose gate and drain are connected with a first node, a second MOS transistor whose gate and drain are connected with the first node and a third node, respectively, a first resistive element which is connected between the first node and a second node, a second resistive element which is connected between the second node and a ground voltage terminal, a first NOT circuit whose input terminal is connected with the second node, whose output terminal is a fourth node, and which is connected between the third node and the ground voltage terminal, and a second NOT circuit whose input terminal is connected with the fourth node and whose output terminal is a fifth node. Consequently, the present invention can detect voltage in a stable condition with low power consumption.
申请公布号 US6538482(B2) 申请公布日期 2003.03.25
申请号 US20010803775 申请日期 2001.03.12
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIRANO HIROSHIGE;ASARI KOUJI;SUMI TATSUMI
分类号 G01R19/00;G01R19/155;G01R19/165;G06F1/28;G11C5/14;G11C8/08;G11C11/22;H03K17/22;(IPC1-7):H03L7/00 主分类号 G01R19/00
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