Read/write memory with self-test device and associated test method

摘要

A read/write memory includes a monolithically integrated self-test device which iteratively enables a defect test with a redundancy analysis, without significant external test aids. The test is achieved essentially by virtue of the fact that word lines to be repaired are stored and excluded from further examinations and in each case the line having the most defects not previously detected is always determined and examined first, until either the number of repair lines no longer suffices or no more defects occur. An associated test method is also provided.