发明名称 Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
摘要 A method and system for electron beam lithography at high throughput with shorter electron beam column length, reduced electron-electron interactions, and higher beam current. The system includes a photocathode having a pattern composed of a periodic array of apertures with a specific geometry. The spacing of the apertures is chosen so as to maximize the transmission of the laser beam through apertures significantly smaller than the photon wavelength. The patterned photocathode is illuminated by an array of laser beams to allow blanking and gray-beam modulation of the individual beams at the source level by the switching of the individual laser beams in the array. Potential applications for this invention include electron beam direct write on wafers and mask patterning.
申请公布号 US6538256(B1) 申请公布日期 2003.03.25
申请号 US20000641099 申请日期 2000.08.17
申请人 APPLIED MATERIALS, INC. 发明人 MANKOS MARIAN;KRISHNAMURTHI VIDHYA;LEE KIM Y.
分类号 G03F7/20;H01J1/34;H01J37/073;H01J37/317;(IPC1-7):H01J37/08;H01J29/72;A61N5/00 主分类号 G03F7/20
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