发明名称 Semiconductor device baking method
摘要 A semiconductor chip is encapsulated with resin into a plastic package so as to form a semiconductor device having the semiconductor chip in the plastic package. The semiconductor device is then received in a container so that the container is vacuumed up to a vacuum degree of 10-6 or less. Thereafter, the semiconductor device is baked at a temperature within a range of 165� C. to 175� C. for 6 hours or more by using a hot plate. Thus, this baking under the reduced pressure prevents generation of blisters and cracks on the plastic package.
申请公布号 US6537859(B2) 申请公布日期 2003.03.25
申请号 US20010804467 申请日期 2001.03.13
申请人 SHARP KABUSHIKI KAISHA 发明人 MITSUMUNE KAZUMASA
分类号 H01L21/56;(IPC1-7):H01L21/44 主分类号 H01L21/56
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