发明名称 Process to remove micro-scratches
摘要 Although CMP has been widely used with generally good results, one remaining problem is the occasional appearance of micro-scratches on the finished surface. Such micro-scratches may also be generated as a byproduct of processes other than CMP. The present invention solves this problem by exposing the surface in question to a gas plasma after the scratch generating process has been completed. Additionally, the invention discloses that the small amount of material that gets removed through exposure to the plasma may be replaced by deposition either in-situ or ex-situ. The added material may be the same as the removed material or a different material.
申请公布号 US6537919(B1) 申请公布日期 2003.03.25
申请号 US20010025241 申请日期 2001.12.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 WANG MING-TSONG
分类号 H01L21/3105;H01L21/311;H01L21/316;H01L21/321;(IPC1-7):H01L21/302;H01L21/31;H01L21/461 主分类号 H01L21/3105
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