发明名称 |
Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge |
摘要 |
SILC characteristics and density of GOI defects of silicon wafers with thin dielectric films (e.g. SiO2) are determined using a non-contact method that does not require any test structures on the wafer. The method includes stressing a dielectric with a corona discharge and measuring the dielectric current-dielectric voltage (I-V) characteristics by monitoring under illumination the corona charge neutralization after stress. An I-V measurement done as function of corona fluence gives SILC characteristics of the wafer. The SILC characteristics are then compared at a constant dielectric field to provide a measure of GOI defect density. The I-V characteristic corresponding to low fluence that does not generate measurable SILC are used to determine a thickness of dielectric film.
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申请公布号 |
US6538462(B1) |
申请公布日期 |
2003.03.25 |
申请号 |
US19990451652 |
申请日期 |
1999.11.30 |
申请人 |
SEMICONDUCTOR DIAGNOSTICS, INC. |
发明人 |
LAGOWSKI JACEK;WILSON MARSHALL;SAVTCHOUK ALEXANDER |
分类号 |
G01R31/26;H01L21/66;(IPC1-7):G01R31/26;G01R31/02;G01R1/04 |
主分类号 |
G01R31/26 |
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