发明名称 |
Semiconductor integrated circuit device and method of manufacturing the same |
摘要 |
A capacitive element C1 having a small leakage current is formed by utilizing a gate oxide film 9B thicker than that of a MISFET of a logic section incorporated in a CMOS gate array, without increasing the number of steps of manufacturing the CMOS gate array. The capacitive element C1 has a gate electrode 10E. A part of the gate electrode 10E is made of a polycrystalline silicon film. The polycrystalline silicon film is doped with n-type impurities, so that the capacitive element may reliably operate even at a low power-supply voltage.
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申请公布号 |
US6538293(B2) |
申请公布日期 |
2003.03.25 |
申请号 |
US20020142062 |
申请日期 |
2002.05.10 |
申请人 |
HITACHI, LTD. |
发明人 |
SUZUKI KAZUHISA;TAKAHASHI TOSHIRO;YANAGISAWA YASUNOBU;NONAKA YUSUKE |
分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8244;H01L27/06;H01L27/092;H01L27/108;H01L27/11;(IPC1-7):H01L31/119 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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