发明名称 Electric device inspection method and electric device inspection system
摘要 An analysis method includes one or more inspection steps for inspecting defects on a wafer, including an electrical inspection an step for inspecting electrical function of dies of the wafer, a determination step for determining whether each die is a good die or a bad die by using results obtained in the electrical inspection step, a calculation step for calculating the yield of dies without defects by using results obtained in the determination step, and an output step for outputting a result of the calculation step.
申请公布号 US6539272(B1) 申请公布日期 2003.03.25
申请号 US20000494939 申请日期 2000.02.01
申请人 HITACHI, LTD. 发明人 ONO MAKOTO;IWATA HISAFUMI;NEMOTO KAZUNORI
分类号 H01L21/02;G01N21/47;G01N21/94;G01N21/95;G01N21/956;(IPC1-7):G06F19/00 主分类号 H01L21/02
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