发明名称 |
Ultra-shallow semiconductor junction formation |
摘要 |
A method for fabricating an ultra-shallow semiconductor junction using a high energy co-implantation step; a low energy dopant implantation step, and a fast isothermal annealing step is provided. Microelectronics devices such as FET and CMOS devices containing said ultra-shallow semiconductor junction is also provided herein.
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申请公布号 |
US6537886(B2) |
申请公布日期 |
2003.03.25 |
申请号 |
US20010878694 |
申请日期 |
2001.06.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEE KAM LEUNG |
分类号 |
H01L21/265;H01L21/8238;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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