| 摘要 |
In a semiconductor device and method of manufacturing thereof, a semiconductor device having an SOI structure is provided with a capacitor including a first electrode in an SOI layer, a second electrode opposing the first electrode, and a dielectric film therebetween. An isolation region is provided as contained in the SOI layer to electrically isolate the first electrode from remaining areas of the SOI layer, such as active areas or the like. The method includes forming the isolation regions in the SOI layer, forming the first electrode in the SOI layer as electrically isolated from the remaining areas of the SOI layer by the isolation regions, forming the dielectric film on the first electrode, and forming the second electrode on the dielectric film opposite the first electrode.
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