| 摘要 |
<p>A ferroelectric memory device comprises a first electrode (102), second electrodes (103) arrayed in a direction perpendicular to the first electrode (102), and a ferroelectric film (101) disposed at least in an intersection area of the first electrode (102) and the second electrodes (103). Capacitors constituted of the first electrode (102), the ferroelectric film (101), and the second electrodes (103) are arranged in a matrix. In the ferroelectric film (101), a ferroelectric phase and a paraelectric phase are mixedly present.</p> |
