| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing composition for CMP processing which has high selectivity of large polishing rate of copper and small polishing rate of tantalum compound and superior in smoothness of a copper film surface in a CMP processing process of a semiconductor device having a copper film and tantalum compound. SOLUTION: The polishing composition is composed of (A) benzotriazole, (B) tartaric acid, (C) hydrogen peroxide, (D) polyvinyl alcohol and (E) water. The concentration of benzotriazole in the polishing composition is 0.01 to 3 wt.%, the concentration of tartaric acid in the polishing composition is 0.05 to 5 wt.%, the concentration of hydrogen peroxide in the polishing composition is 0.03 to 5 wt.%, and the concentration of polyvinyl alcohol in the polishing composition is 0.01 to 5 wt.%.</p> |
