MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide MIS and MOS semiconductor devices having high channel mobility using a semiconductor substrate containing a silicon carbide region. SOLUTION: Related to manufacturing of a silicon carbide semiconductor device containing a process wherein a gate insulation film such as a silicon oxide film, a silicon nitride film or a silicon oxide nitride film is formed on the semiconductor substrate containing the silicon carbide region, the gate insulation film is formed on the silicon carbide region, and then heat treatment is performed at a predetermined temperature at 900-1000 deg.C in an atmosphere containing H2 O (water) for a predetermined time.