| 摘要 |
PROBLEM TO BE SOLVED: To provide an output buffer of a semiconductor device in which noise is small and the response speed is also fast. SOLUTION: In this output buffer 6 of a semiconductor storage device, both two N channel MOS transistors 13 and 14 for pulldown are made conductive in response to a trailing edge of an internal data signal DOI, and the one N channel MOS transistor between the two N channel MOS transistors 13 and 14 is made nonconductive since the level of an external data signal DO surpasses a reference potential VR until the level of the external data signal DO becomes an 'L' level. Accordingly, it is possible to reduce the noise that occurs in a line of a ground voltage GND without lowering the speed at which the external data signal DO falls from an 'H' level to the reference potential VR.
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