| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of slow switching speed and large switching loss in such a case of employing a conventional field-effect transistor that comprises a high voltage resistant transverse MOS structure and a finger structure with high resistance to a metal in gate electrode. SOLUTION: A second gate electrode 7 parallel to a first source electrode 5 is provided on a drain electrode 10 side, and a first gate electrode 6 is electrically connected to the second gate electrode 7 with a plurality of gate contact window parts 15 apart from one another in-between. As a result, gate resistance is reduced, so that the switching speed is made higher, and the switching loss is reduced.
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