MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having the charge holding characteristic as designed. SOLUTION: In the process shown in Fig. 1 (b), an SiO2 film wherein dot bodies 104 are buried is deposited on a substrate by a sputtering method. In the case of depositing the SiO2 film by the sputtering method, SiO2 can reach the substrate in the state of molecules at a nearly ordinary temperature. Therefore, since the dot bodies 104 are not exposed to a high-temperature oxygen atmosphere having a high reactivity, the oxidations of the surfaces of the dot bodies 104 can be prevented.