| 摘要 |
To provide a positive resist composition having high sensitivity, small defocus latitude depended on line pitch and less surface roughening at the etching, which can be suitably used for micro-photofabrication using far ultraviolet ray, particularly, ArF excimer laser ray. A positive resist composition comprising (A) a resin containing specific two kinds of repeating units, which has an aliphatic cyclic hydrocarbon group on the side chain and increases the dissolution rate in an alkali developer under the action of an acid, and (B) a specific compound capable of generating an acid upon irradiation with actinic rays or radiation, or a positive resist composition comprising (A) two kinds of resins as the resin having an aliphatic cyclic hydrocarbon group on the side chain and capable of increasing the dissolution rate in an alkali developer under the action of an acid, and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation.
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