| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodiode array capable of satisfactorily reducing the generation of any cross-talk even at the time of collecting electrodes or wiring at one face side. SOLUTION: In a photodiode array 1, a plurality of p type semiconductor layers 3 are arranged on a surface 2s of an n- type semiconductor substrate 2, and light to be detected is made incident from a back face 2u side of the semiconductor substrate 2. Then, an n+ type channel stopper layer 4 having impurity density higher than that of the semiconductor substrate and a trench part 10 arranged so that the periphery of each p type semiconductor layer 3 can be roughly surrounded, and extended from the channel stopper layer 4 to the back face 2u side are arranged on one face side of the semiconductor substrate 2. A trench non-existing part 9 where the trench part 10 does not exist is formed in at least one part of the periphery of each p type semiconductor layer 3, and sites 4c corresponding to the adjacent semiconductor layers 3 of the channel stopper layer 4 are continuously formed through each trench non-existing part 9.
|
