SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which uses a semiconductor film having a flat main surface as an active layer. SOLUTION: A semiconductor film 5 having a flat main surface (having an RMS value less than 10 nm as a surface roughness and a P-V value less than 70 nm) is formed by crystallizing a silicon film 3 containing (several % of or preferably 0.1-10 atoms of) germanium and irradiating the film with a laser beam. When the crystallization is carried out using a metal element to promote the crystallization, a semiconductor film is formed having not only with a high plurality but also a high crystal orientation rate.