CVD material compound and method for manufacturing the same and CVD method of ruthenium or ruthenium compound thin film

摘要

The present invention provides a CVD material compound based on an organic ruthenium compound, the organic ruthenium compound consisting of one of cis and trans isomers of tris (2,4-octa-dionato) ruthenium (III). The organic ruthenium compound which consists of cis or trans isomer can be isolated by the steps of preparing tris (2,4-octa-dionato) ruthenium (III) in any method, making the tris (2,4-octa-dionato) ruthenium (III) adsorbed on an adsorbent including alumina, bringing the adsorbent into contact with a first solvent to elute the trans isomer and then bringing the adsorbent into contact with a second solvent having a polarity higher than that of the first solvent to elute the cis isomer.