| 发明名称 |
METHOD AND APPARATUS FOR FORMING LOW PERMITTIVITY FILM AND ELECTRONIC DEVICE USING THE FILM |
| 摘要 |
A method for forming a film having a low permittivity, characterized in that it comprises the steps of generating a plasma in a film forming chamber, reacting nitrogen atoms with boron and carbon in the film forming chamber to form a boron-carbon-nitrogen film on a substrate, and then irradiating the resulting film with a light. The method allows the formation of a thin boron-carbon-nitrogen film exhibiting a reduced permittivity.
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| 申请公布号 |
WO03023842(A1) |
申请公布日期 |
2003.03.20 |
| 申请号 |
WO2002JP09227 |
申请日期 |
2002.09.10 |
| 申请人 |
KABUSHIKI KAISHA WATANABE SHOKO;SUGINO, TAKASHI;KUSUHARA, MASAKI;UMEDA, MASARU |
发明人 |
SUGINO, TAKASHI;KUSUHARA, MASAKI;UMEDA, MASARU |
| 分类号 |
C23C16/30;C23C16/36;H01L21/318;H01L21/768;(IPC1-7):H01L21/314;C23C16/38;C23C16/56 |
主分类号 |
C23C16/30 |
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