发明名称 METHOD OF SEPARATING SEMICONDUCTOR DIE FROM WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for separating a die from a semiconductor wafer by manufacturing a semiconductor die which is free from the generation of contaminating particles and a method for removing a material from the rear side of a wafer and fixing a semiconductor device to a surface. SOLUTION: One or a plurality of channels (214) are etched between individual die regions (204) in an upper side (206) of a wafer (202). A material is then removed from the rear side (208) of a wafer for separating the individual dies. A method is also disclosed for removing a material from the rear side of a die of a wafer. A contoured surface (280) is provided to the rear of a die through an etching process or the like. A semiconductor wafer and a die have contoured rear surfaces.
申请公布号 JP2003086544(A) 申请公布日期 2003.03.20
申请号 JP20020214138 申请日期 2002.07.23
申请人 TEXAS INSTR INC <TI> 发明人 WACHTLER KURT P
分类号 H01L21/301;H01L21/68;H01L21/78;H01L29/06 主分类号 H01L21/301
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