| 摘要 |
PROBLEM TO BE SOLVED: To prevent a dielectric film and an electrode from being exfoliated by improving the adhesion properties in the dielectric film and the electrode that are formed on a nitride semiconductor. SOLUTION: The nitride semiconductor device containing a nitride semiconductor layer, an electrode, and a dielectric film has an InGaNX contact layer containing one or more elements X selected from among As, P, and Sb in contact with an area between the nitride semiconductor layer and the dielectric film, thus preventing the dielectric film from being exfoliated. Additionally, an electrode is formed in contact with the InGaNX contact layer, thus preventing the electrode from being exfoliated. |
