| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the reliability of a magnetic memory device while suppressing its power consumption low. SOLUTION: After a 4th inter-layer insulating film 20 is formed covering a TMR element 18, the 4th inter-layer insulating film 20 is polished by using slurry which is slow in polishing speed for the metal, such as Pt, Au, and W, constituting an upper magnetic layer 17 of the TMR element 18 and fast in polishing speed for the 4th inter-layer insulating film 20. The polishing is stopped by the TMR element 18 as a stop layer and the TMR element 18 is exposed through self-alignment. Then a bit line 21 is laminated and formed on the 4th inter-layer insulating film 20 and TMR element 18. Consequently, an upper magnetic layer 17 of the TMR element 18 and the bit line 21 are brought into direct contact with each other.</p> |
