| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic resistance element that can prevent degrading of reliability and stability even when it is heated for monolithic processing with a conventional Si semiconductor. SOLUTION: This magnetic resistance element is manufactured by a method including a step for heat treatment of 330 deg.C or higher, and a maximum distance between the center line of a nonmagnetic layer and a boundary between paired ferromagnetic layers and nonmagnetic layer is 10 nm or less. The magnetic resistance element is formed by forming a base film on a substrate, heating the base film at 400 deg.C or higher, emitting an ion beam over the base film to reduce its surface roughness, and forming a ferromagnetic layer and a magnetic layer. Even when an M<1> (at least one kind selected among Tc, Re, Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au) is given in a region of 2 nm from the boundary with the nonmagnetic layer, the maximum distance is relatively reduced.
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