| 摘要 |
A semiconductor device may include a fuse section 110 in which a plurality of fuses 20 to be fused by irradiation of a laser beam are formed. The fuses 20 are arranged at a specified pitch. A first insulation layer 33 is embedded between adjacent ones of the fuses 20. A second insulation layer 39 is formed on the first insulation layer 33. The first insulation layer 33 and the second insulation layer 39 are formed such that their interface 42 is generally at the same level as the top surface of the fuses 20. As a result, the fuses may be reliably fused without generating cracks in the interface 42 at the time of fusing the fuses.
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