发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device comprises an electrode formed above a substrate, an under bump metal (UBM) film on the electrode, the under bump metal film being in the shape of a recess, and a bump electrode embedded in the under bump metal film, the bump electrode having sides and bottom thereof surrounded by the under bump metal film.
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申请公布号 |
US2003052409(A1) |
申请公布日期 |
2003.03.20 |
申请号 |
US20020228081 |
申请日期 |
2002.08.27 |
申请人 |
MATSUO MIE;MIYATA MASAHIRO;EZAWA HIROKAZU |
发明人 |
MATSUO MIE;MIYATA MASAHIRO;EZAWA HIROKAZU |
分类号 |
H01L21/48;H01L21/60;H01L21/98;H01L23/14;H01L23/485;H01L23/498;H01L25/065;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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