| 摘要 |
<p>A production method for semiconductor devices comprising the step of forming on a silicon carbide substrate a gate insulation film such as a silicon oxide film, silicon nitride film or silicon oxide nitride film, wherein, after the gate insulation film is formed on the silicon carbide substrate, the film is heat treated within a temperature range of 900°C to 1000°C in an atmosphere containing at least 25% of H2O (water) to provide a semiconductor device improved in channel mobility.</p> |
