THIN FILM SEMICONDUCTOR DEVICE, SUBSTRATE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a thin film semiconductor device wherein irregularity and a secular change of an operating threshold are little which are difficult points of the conventional thin film semiconductor device using an oxide film deposited at a low temperature by a plasma CDV method, and a thin film semiconductor device of the mobility wherein unit electric circuits are arranged regularly in accordance with crystal orientation of semiconductor grains. SOLUTION: This thin film semiconductor device substrate is manufactured by forming an insulating oxide film in a prescribed region in a thin film by implanting oxygen ions in a non-single crystal semiconductor thin film deposited on a base layer and performing energy beam irradiation. A thin film semiconductor is manufactured by forming an electric circuit by using the insulating oxide film as a gate insulating film. The thin film semiconductor device is manufactured wherein the configuration of electric circuit is based on a substrate having a layer wherein the semiconductor crystal grains are regularly arranged and which is obtained by the energy beam irradiation in a specified form.